1998. 6. 15 1/2 semiconductor technical data ktc4373 epitaxial planar npn transistor revision no : 2 high voltage application. features high voltage : v ceo =120v. high transition frequency : f t =120mhz(typ.). 1w(monunted on ceramic substrate). small flat package. complementary to kta1661. maximum rating (ta=25 ) dim a b d e g h k 4.70 max 2.50 0.20 1.70 max 0.45+0.15/-0.10 4.25 max 1.50 0.10 0.40 typ 1.75 max 0.75 min 0.5+0.10/-0.05 sot-89 c j g d 123 2. collector (heat sink) a c k j f millimeters h 1. base 3. emitter b e ff d + _ + _ electrical characteristics (ta=25 ) note : h fe classification o:80 160, y:120 240 p c * : ktc4373 mounted on ceramic substrate (250mm 2 x0.8t) c type name h rank fe lot no. marking characteristic symbol test condition min. typ. max. unit collector cut-off current i cbo v cb =120v, i e =0 - - 100 na emitter cut-off current i ebo v eb =5v, i c =0 - - 100 na collector-emitter breakdown voltage v (br)ceo i c =10ma, i b =0 120 - - v emitter-base breakdown voltage v (br)ebo i e =1ma, i c =0 5.0 - - v dc current gain h fe (note) v ce =5v, i c =100ma 80 - 240 collector-emitter saturation voltage v ce(sat) i c =500ma, i b =50ma - - 1.0 v base-emitter voltage v be v ce =5v, i c =500ma - - 1.0 v transition frequency f t v ce =5v, i c =100ma - 120 - mhz collector output capacitance c ob v cb =10v, i e =0, f=1mhz - - 30 pf characteristic symbol rating unit collector-base voltage v cbo 120 v collector-emitter voltage v ceo 120 v emitter-base voltage v ebo 5 v collector current i c 800 ma base current i b 160 ma collector power dissipation p c 500 mw p c * 1 w junction temperature t j 150 storage temperature range t stg -55 150
1998. 6. 15 2/2 ktc4373 revision no : 2
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